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III-V - Semiconductors

Standard:

Diameter: 2" - 3" Thickness: 300 - 500 µm Orientation: (100)(111)(110)

GaAs - Gallium Arsenide

Lattice const.: 0.565 nm Dopand: Si,Te,Zn,undoped

GaP - Gallium Phosphide

Lattice const.: 0.545 nm Dopand: Cr,S,Zn,undoped

GaSb - Gallium Antimonide

Lattice const.: 0.609 nm Dopand: Te,Si,Ge,undoped
 

- partly from stock - other formats on request - also single pieces

InAs - Indium Arsenide

Lattice const.: 0.606 nm Dopand: S,Zn,undoped

InP - Indium Phosphide

Lattice const.: 0.587 nm Dopand: Fe,S,Cd,undoped

InSb - Indium Antimonide

Lattice const.: 0.648 nm Dopand: Te,Ge,undoped